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Proceedings Paper

Photodetectors on the base of local polysilicon films
Author(s): Fuad J. Kasimov; Fakhraddin G. Agaev; Elmar M. Gajiev
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Paper Abstract

Photoelectric properties of polycrystalline silicon films under influence of illumination were investigated. The possibility of forming polysilicon films by pulse thermal annealing has been shown. Obtained results of measurements have been analyzed from the viewpoint of the model of polycrystalline film conductance taking intergrain barriers of the Shottky type. It was shown that polysilicon film with fine grain size may be use as short wave photodetectors due to the presence of shallow p-n junctions at their grain boundary.

Paper Details

Date Published: 12 June 2001
PDF: 7 pages
Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); doi: 10.1117/12.429741
Show Author Affiliations
Fuad J. Kasimov, Azerbaijan National Aerospace Agency (Azerbaijan)
Fakhraddin G. Agaev, Azerbaijan National Aerospace Agency (Azerbaijan)
Elmar M. Gajiev, Azerbaijan National Aerospace Agency (Azerbaijan)

Published in SPIE Proceedings Vol. 4425:
Selected Papers from the International Conference on Optoelectronic Information Technologies
Sergey V. Svechnikov; Volodymyr P. Kojemiako; Sergey A. Kostyukevych, Editor(s)

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