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Proceedings Paper

HgCdTe buried multiple photodiodes fabricated by the liquid phase epitaxy
Author(s): Waldemar Gawron; Krzysztof Adamiec; Antoni Rogalski
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Paper Abstract

This article reports the advancement of Hg1-xCdxTe epitaxial growth on CdZnTe(111)B substrates. Prior to growth of HgCdTe layers the substrate has been etched to form the bars on 30 micrometers centers and 20-micrometers depth. Next, 20-micrometers thick HgCdTe epitaxial layer has been grown by liquid phase epitaxy from Te-rich solution. The Nomarski microscopy showed that the surface of specially prepared layers were flat and the composition of layers, measured by FTIR microscopy, was homogeneous. Samples were cleaved and examined in cross section by SEM.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429428
Show Author Affiliations
Waldemar Gawron, Military Univ. of Technology (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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