Share Email Print

Proceedings Paper

Responsivity and gain in InGaAs/GaAs-QWIPs and GaAs/AlGaAs-QWIPs: a comparative study
Author(s): Robert Rehm; Harald Schneider; K. Schwarz; Martin Walther; Peter Koidl; Guenter Weimann
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We experimentally compare the peak responsivity R, gain g, quantum efficiency, and detectivity of GaAs/AlGaAs-QWIPs with devices based on the competing material system InGaAs/GaAs. For this purpose we use a typical n-type GaAs/AlGaAs-QWIP and three n-type InGaAs/GaAs-QWIPs with varying doping densities. R and g of the GaAs/AlGaAs-QWIP show a typical negative differential behavior, while both quantities grow monotonously with increasing bias voltage in the case of the InGaAs/GaAs-QWIPs. For identical nominal doping densities and similar cutoff wavelengths between 8.9 micrometers and 9 micrometers , InGaAs/GaAs-QWIPs show much higher responsivities than GaAs/AlGaAs-QWIPs. The ratio between these responsivities is 2.5 at the bias voltage where the GaAs/AlGaAs-QWIP has its maximum. By making use of the different bias dependence of the responsivity in both types of QWIPs a further enhancement of this factor is achieved. Nevertheless, both types of QWIPs show comparable detectivities. This is due to the fact that the gain has a negligible influence on the detectivity. In conclusion, InGaAs/GaAs-QWIPs are promising if high responsivities and short integration times are required.

Paper Details

Date Published: 12 June 2001
PDF: 7 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429424
Show Author Affiliations
Robert Rehm, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Harald Schneider, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
K. Schwarz, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Walther, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Peter Koidl, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Guenter Weimann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)

Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?