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Proceedings Paper

Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes
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Paper Abstract

In the paper the performance of P-on-n double-layer heterojunction HgCdTe photodiodes are temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R0A product is analyzed. The effect of lateral collection of diffusion current and photocurrent on photodiode parameters is also shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p- side doping concentration on photodiode parameters is described briefly.

Paper Details

Date Published: 12 June 2001
PDF: 10 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429419
Show Author Affiliations
Jakub Wenus, Military Univ. of Technology (Poland)
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
Antoni Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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