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Proceedings Paper

AlGaN Schottky diodes for short-wavelength UV applications
Author(s): Peter P. Chow; Jody J. Klaassen; Robert E. Vest; James M. Van Hove; Andrew M. Wowchak; Christina Polley
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Paper Abstract

High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy. The realized AlGaN Schottky detectors exhibit high responsivity, sharp spectral cutoff and high shunt resistance of several giga-ohms for 0.5 mm2 active area devices. Quantitative measurements have been carried out on these detectors in the photon energy range from < 1 to > 10 eV (from approximately 1200 to 120 nm in wavelength). Very short UV spectral measurement of these AlGaN detectors is reported for the first time using high intensity sources. The detectors exhibited almost eight orders of magnitude in response dynamic range in that spectral span. Reliability of the devices is evaluated after exposure to repeated DUV irradiation.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429410
Show Author Affiliations
Peter P. Chow, SVT Associates, Inc. (United States)
Jody J. Klaassen, SVT Associates, Inc. (United States)
Robert E. Vest, National Institute of Standards and Technology (United States)
James M. Van Hove, SVT Associates, Inc. (United States)
Andrew M. Wowchak, SVT Associates, Inc. (United States)
Christina Polley, SVT Associates, Inc. (United States)

Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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