High performance ultraviolet (UV) detectors have been fabricated using plasma-enhanced molecular beam epitaxy. The realized AlGaN Schottky detectors exhibit high responsivity, sharp spectral cutoff and high shunt resistance of several giga-ohms for 0.5 mm² active area devices. Quantitative measurements have been carried out on these detectors in the photon energy range from < 1 to > 10 eV (from approximately 1200 to 120 nm in wavelength). Very short UV spectral measurement of these AlGaN detectors is reported for the first time using high intensity sources. The detectors exhibited almost eight orders of magnitude in response dynamic range in that spectral span. Reliability of the devices is evaluated after exposure to repeated DUV irradiation.

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429410

Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)