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Proceedings Paper

Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors
Author(s): K. Alex Anselm; Hongwen Ren; Mauro Vilela; Jun Zheng; C.H. Thompson Lin; Vaidya Nathan; Gail J. Brown
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Paper Abstract

The design and characteristics of very long wavelength InAs/InGaSb strained layer superlattice photodiodes are presented. These photodiodes have cutoff wavelengths ranging from 12 to longer than 15 microns, and are among the longest wavelengths reported for photovoltaic detectors made using this material system. Structural, optical and electrical properties are reported. Measured quantum efficiencies are as high as 10% at 10 micron for a 0.7 micron thick structure at 77K. The absorption coefficients are excellent, however, the electrical properties still need improvement.

Paper Details

Date Published: 12 June 2001
PDF: 8 pages
Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); doi: 10.1117/12.429405
Show Author Affiliations
K. Alex Anselm, Applied Optoelectronics, Inc. (United States)
Hongwen Ren, Applied Optoelectronics, Inc. (United States)
Mauro Vilela, Applied Optoelectronics, Inc. (United States)
Jun Zheng, Applied Optoelectronics, Inc. (United States)
C.H. Thompson Lin, Applied Optoelectronics, Inc. (United States)
Vaidya Nathan, Air Force Research Lab. (United States)
Gail J. Brown, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 4288:
Photodetectors: Materials and Devices VI
Gail J. Brown; Manijeh Razeghi, Editor(s)

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