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Proceedings Paper

Si/Si1-xGex/Si low-loss waveguides fabricated using selective epitaxial growth
Author(s): Adrian P. Vonsovici; Souren P. Pogossian; Lili Vescan
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Paper Abstract

The realisation of two-dimensional Si/Si1-xGex/Si strained layer low-loss waveguides (1.7 dB/cm at 1.3micrometers ) is reported. The waveguide structure is grown using selective epitaxy. This fabrication method insures loosened cut-off and critical thickness conditions as demonstrated previously by the room-tem-perature operation of vertical emitting SiGe/Si LED. The main difference from other fabrication methods is the local deposition of the SiGe in a finite stripe region while in the conventional fabrication of rib waveguides the SiGe layer is deposited on an entire wafer and then patterned by reactive ion etching. The relative high amount of Ge (19%) incorpo-rated in selectively grown waveguides, and reduced thickness (0.6micrometers ) of Si cap layer are improvements from the previous reported SiGe/Si waveguides where thick Si cap layers (few microns) and reduced Ge concentrations (<10%) are necessary in order to obtain waveguiding.

Paper Details

Date Published: 18 May 2001
PDF: 6 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426925
Show Author Affiliations
Adrian P. Vonsovici, Bookham Technology plc (United Kingdom)
Souren P. Pogossian, Magnetisme de Bretagne (France)
Lili Vescan, Forschungszentrum Juelich GmbH (Germany)

Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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