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Proceedings Paper

(SiGe/Si)n/Si quantum wells for enhanced spontaneous emission LEDs
Author(s): Souren P. Pogossian; Adrian P. Vonsovici; Lili Vescan
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Paper Abstract

We analyse theoretically the feasibility of a vertical (SiGe/Si)n/Si quantum well structures for enhanced spontaneous emission light emitting diodes. The structure can be grown by selective epitaxy on silicon-on-insulator substrate. A design of a LED emitting at 1.3 micrometers wavelength is carried out.

Paper Details

Date Published: 18 May 2001
PDF: 8 pages
Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); doi: 10.1117/12.426923
Show Author Affiliations
Souren P. Pogossian, Lab. de Magnetisme de Bretagne (France)
Adrian P. Vonsovici, Univ. of Surrey (United Kingdom)
Lili Vescan, Forschungszentrum Juelich GmbH (Germany)

Published in SPIE Proceedings Vol. 4293:
Silicon-based and Hybrid Optoelectronics III
David J. Robbins; John Alfred Trezza; Ghassan E. Jabbour, Editor(s)

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