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Proceedings Paper

Thermal failure model and reliability tests of solar cells
Author(s): Xiankun Xin; Guang Ci Cao
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Paper Abstract

Within silicon silver is an impurity with fast diffusivity and deep levels. It forms effective recombination centers in silicon acting as either acceptor or donor levels. That has been confirmed by a depth profile analysis with the SIMS. The silver atoms do exist near the barrier region of a solar cell with Ti/Pd/Ag electrodes heated at 245 degrees Celsius for 308 hours. The open circuit voltage at low injection decreases as recombination actions increase in the barrier region. According to these phenomena, an estimation for the lifetime of solar cells is given by using acceleration tress tests based on Arrhenius equation.

Paper Details

Date Published: 17 May 2001
PDF: 5 pages
Proc. SPIE 4285, Testing, Reliability, and Applications of Optoelectronic Devices, (17 May 2001); doi: 10.1117/12.426893
Show Author Affiliations
Xiankun Xin, Shanghai Teachers Univ. (China)
Guang Ci Cao, Shanghai Teachers Univ. (China)

Published in SPIE Proceedings Vol. 4285:
Testing, Reliability, and Applications of Optoelectronic Devices
Aland K. Chin; S. C. Wang; Niloy K. Dutta; Niloy K. Dutta; Kurt J. Linden; S. C. Wang, Editor(s)

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