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Proceedings Paper

Temperature dependence of electroluminescence in tris-(8-hydroxy) quinoline aluminum (Alq3) light-emitting diode
Author(s): Shymal Kumar Saha; Yan-Kuin Su; Fuh Shyang Juang
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Paper Abstract

Organic electroluminescent devices using tris-(8-hydroxy) quinoline aluminum (Alq3) as the emissive layer and N,N'- diphenyl-N,N' bis (3-methylphenyl)-[1-1'-biphenyl]-4-4'- diamine (TPD) as the conventional hole transport layer have been fabricated. We tried to explore the charge transport mechanisms in the OLED device by the studying of temperature dependent luminescence over the temperature range from 10 K to 300 K. We found that first, at lower applied voltage, two peaks have been observed in the quantum efficiency with temperature, and they are due to deep trap levels (high temperature regime) and shallow trap levels (low temperature regime). With increasing voltage, the high-temperature peak shifts toward lower temperature but no significant shift of the low-temperature peak is observed, and when the voltage is over 10 V, superposition of the peaks causes the apparent saturation in the low temperature regime of the quantum efficiency. Second, up to a certain temperature luminescence intensity decreases with decreasing temperature and then saturated in the low temperature region. The quantum efficiency increases with decreasing temperature and finally reaches to almost a constant value. Meanwhile we tried to use Frenkel exciton model to explain the luminescence behavior of the device.

Paper Details

Date Published: 14 May 2001
PDF: 7 pages
Proc. SPIE 4278, Light-Emitting Diodes: Research, Manufacturing, and Applications V, (14 May 2001); doi: 10.1117/12.426848
Show Author Affiliations
Shymal Kumar Saha, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Fuh Shyang Juang, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 4278:
Light-Emitting Diodes: Research, Manufacturing, and Applications V
H. Walter Yao; E. Fred Schubert, Editor(s)

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