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Proceedings Paper

Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography
Author(s): Janis Teteris; Ilona Kuzmina
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Paper Abstract

The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.

Paper Details

Date Published: 10 April 2001
PDF: 6 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425513
Show Author Affiliations
Janis Teteris, Univ. of Latvia (Latvia)
Ilona Kuzmina, Univ. of Latvia (Latvia)

Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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