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Proceedings Paper

Effects of localization in CdTe-based quantum well structures
Author(s): M. Godlewski; V. Yu. Ivanov; A. Khachapuridze; R. Narkowicz; M. R. Phillips
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Paper Abstract

Properties of strongly localized excitons in heterostructures of CdTe/CdMnTe are described. Strong localization effects, which modify properties of excitons, are related to micro- structure characteristics of the sample studied. We demonstrate that at low temperatures excitons in the structure with 68% Mn fraction in the CdMnTe barriers are quasi-zero- dimensional.

Paper Details

Date Published: 10 April 2001
PDF: 6 pages
Proc. SPIE 4415, Optical Organic and Inorganic Materials, (10 April 2001); doi: 10.1117/12.425475
Show Author Affiliations
M. Godlewski, Semiconductor Physics Institute (Poland)
V. Yu. Ivanov, Semiconductor Physics Institute (Poland)
A. Khachapuridze, Semiconductor Physics Institute (Poland)
R. Narkowicz, Ecole Polytechnique Federale de Lausanne and Institute of Semiconductor Physics (Switzerland)
M. R. Phillips, Univ. of Technology/Sydney (Australia)

Published in SPIE Proceedings Vol. 4415:
Optical Organic and Inorganic Materials
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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