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Proceedings Paper

Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics
Author(s): Yoon-Soo Park
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Paper Abstract

The world at the end of the 20th Century has become blue. Indeed, this past decade has witnessed a blue rush towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide band gap III-nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of- the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.

Paper Details

Date Published: 17 April 2001
PDF: 11 pages
Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); doi: 10.1117/12.425448
Show Author Affiliations
Yoon-Soo Park, Office of Naval Research (United States)


Published in SPIE Proceedings Vol. 4413:
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
Jaroslaw Rutkowski; Jakub Wenus; Leszek Kubiak, Editor(s)

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