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Proceedings Paper

Critical procedure for OPC software benchmarking with maskshop consideration
Author(s): Alexandra Barberet; Gerald Galan; Gilles L. Fanget; Jean-Charles Richoilley; Michel Tissier; Yves Quere
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Paper Abstract

To print subwavelength dimension features in optical lithography, one must correct significant Optical Proximity Effects as well as some other process outcomes. Nowadays, different firms propose to Silicon Industry Optical Proximity Correction (OPC) software. This software may be either Rule-based or Model-based or a mixed of both methods. To have the most judicious choice to acquire one of them, we prepare a procedure of evaluation with both mask manufacturing interest and Silicon process concern. The first part of the work is a technical study. We evaluate the OPC generation step in terms of speed, used memory an size evolution of the databases. We add a qualitative evaluation of the correction quality after lithography simulation. The second part of the work is the manufacturability evaluation. The results of the layout, produced by suppliers are analyzed and compared in term of mask complexity, mask resolution and anomalies generated.

Paper Details

Date Published: 26 April 2001
PDF: 12 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425206
Show Author Affiliations
Alexandra Barberet, DuPont Photomasks SA (France)
Gerald Galan, DuPont Photomasks SA (France)
Gilles L. Fanget, CEA-LETI (France)
Jean-Charles Richoilley, DuPont Photomasks SA (France)
Michel Tissier, DuPont Photomasks SA (France)
Yves Quere, CEA-LETI (France)

Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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