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Proceedings Paper

Simple method for characterizing photoresist dissolution properties
Author(s): Steven G. Hansen; Youri van Dommelen
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Paper Abstract

The lithographic performance of a photoresist process is largely determined by details of the dissolution properties. Numerous methods have been used to obtain this information but most fall into two major categories: 1) a traditional dissolution rate monitor (DRM) which measures film thickness versus time for multiple exposure doses, and 2) 'Poor man's DRM' which deduces dissolution rates from measured film loss as a function of dose for several different development times. The traditional DRM method has several disadvantages including the relative complexity of the equipment. The Poor man's approach, while convenient, has difficulty with very high and very low dissolution rates, and cannot easily distinguish surface dissolution form bulk dissolution. This paper shows results with a simple approach based on off-line analysis of videotape of a developing wafer. This video DRM method offers several advantages including portability and low cost. The results are not strongly influenced by process variables involving experimental geometry, developer volume, or the immediate environment. The camera can view small areas and therefore the method appears to be applicable to micro stepper exposures. A detailed analysis of a 248nm process is given but the method is also applied to 193nm and 157nm resist processes at different locations.

Paper Details

Date Published: 26 April 2001
PDF: 9 pages
Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); doi: 10.1117/12.425194
Show Author Affiliations
Steven G. Hansen, ASML (United States)
Youri van Dommelen, ASML (Netherlands)

Published in SPIE Proceedings Vol. 4404:
Lithography for Semiconductor Manufacturing II
Chris A. Mack; Tom Stevenson, Editor(s)

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