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Proceedings Paper

Comparison of linewidth measurements on COG masks
Author(s): Harald Bosse; Werner Mirande; Carl G. Frase; Hans-Juergen Brueck; Sigrid Lehnigk
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Paper Abstract

We report on comparison measurements for linewidths of test structures on chrome on glass photomasks by means of different types of light optical transmission microscopy and low voltage scanning electron microscopy (LVSEM). The investigated linewidth or critical dimension range was chosen to be between 0.3 micrometers and 5 micrometers on isolated and dense as well as clear and opaque line structures. After offset correction of the commercial i-line CD metrology tool we observed overall agreement between the results from light optical microscopy and the results from the LVSEM in the range of 20 nm. No significant polarization dependencies of transmitted light results were observed. The edge detection algorithms used for extraction of edge position from the measured profiles will be discussed for the types of instruments involved.

Paper Details

Date Published: 9 April 2001
PDF: 10 pages
Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); doi: 10.1117/12.425082
Show Author Affiliations
Harald Bosse, Physikalisch-Technische Bundesanstalt (Germany)
Werner Mirande, Physikalisch-Technische Bundesanstalt (Germany)
Carl G. Frase, Physikalisch-Technische Bundesanstalt (Germany)
Hans-Juergen Brueck, MueTec GmbH (Germany)
Sigrid Lehnigk, Submicron Technologies GmbH (Germany)

Published in SPIE Proceedings Vol. 4349:
17th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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