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Proceedings Paper

Reliable materials and instruments for 157-nm lithography
Author(s): Klaus Vogler; Frank Voss; Elko Bergmann; Uwe Stamm; Wojciech J. Walecki; Dirk Basting
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Paper Abstract

While the 157 nm optical lithography has become recognized as the most promising solution for the 70-nm node of Semiconductor Industry Association Roadmap, the reliable metrology for this spectral range still remains one of the biggest challenges. We report the results of our long-term exposure measurements, which led to improved performance of the optical components of F2 laser. We discuss in detail the development of the reliable energy monitors degrading less than 3% per billion pulses. We also report the development of novel VUV laser beam profiling tool, measuring the divergence and the width of the beam with accuracy of 0.05 mrad, and 0.10 mm respectively. The compact size makes this tool useful for applications outside the optical laboratory. We also discuss present status and our recent contributions to the high resolution VUV spectroscopy and demanding requirements imposed by 157 nm lithography.

Paper Details

Date Published: 12 April 2001
PDF: 2 pages
Proc. SPIE 4347, Laser-Induced Damage in Optical Materials: 2000, (12 April 2001); doi: 10.1117/12.425041
Show Author Affiliations
Klaus Vogler, Lambda Physik AG (Germany)
Frank Voss, Lambda Physik AG (Germany)
Elko Bergmann, Lambda Physik AG (Germany)
Uwe Stamm, Lambda Physik AG (Germany)
Wojciech J. Walecki, Lambda Physik USA, Inc. (United States)
Dirk Basting, Lambda Physik USA, Inc. (United States)

Published in SPIE Proceedings Vol. 4347:
Laser-Induced Damage in Optical Materials: 2000
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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