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Proceedings Paper

Novel multiple lateral polysilicon p+-n-n+ and p+-p-n+ diodes
Author(s): Sooraj V. Karnik; Susan Alexander; William Bruce Jr.; Miltiadis K. Hatalis
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Paper Abstract

Lateral polysilicon p+-n-n+ and p+-p- n+ diodes in a series combination of 2 to 5 were fabricated and their electronic properties such as ON- resistance, reverse current and ideality factor were studied. Since the multiple diodes are in series with each other, they have a reduced reverse current. Such a series combination can be used as a single device in applications such as x-ray sensing arrays, which need switching devices with reverse current lower than 1 by 10-12 A and forward current more than 1 by 10-6 A. The ON- resistance and the ideality facto increase linearly with the number of diodes in series. This behavior is attributed to the effect of series combination of diodes.

Paper Details

Date Published: 30 April 2001
PDF: 5 pages
Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424865
Show Author Affiliations
Sooraj V. Karnik, Lehigh Univ. (United States)
Susan Alexander, Lehigh Univ. (United States)
William Bruce Jr., Lehigh Univ. (United States)
Miltiadis K. Hatalis, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 4295:
Flat Panel Display Technology and Display Metrology II
Edward F. Kelley; Edward F. Kelley; Apostolos T. Voutsas, Editor(s)

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