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Proceedings Paper

Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass
Author(s): Ryoichi Ishihara; Paul Ch. van der Wilt; Barry D. van Dijk; Artyom Burtsev; F. C. Voogt; G. J. Bertens; J. W. Metselaar; C. I. M. Beenakker
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Paper Abstract

This paper reviews advanced excimer-laser crystallization techniques and its application to crystal-Si thin film transistors (TFTs). Combined microstructure and time- resolved optical reflectivity investigations during conventional excimer-laser crystallization showed that explosive crystallization occurs during excimer-laser irradiation. Two methods enabling location-control of large silicon islands will be reviewed. One of the methods uses local thermal relief by modifying locally the heat extraction rate towards the substrate. A small unmolten region remains at the center of high heat extraction part which then acts as a seed for radially grown Si grain with a diameter of 6 micrometers . One of the other methods use geometric selection through a vertical narrow constriction. In this method, upon laser irradiation, a small unmolten Si region remains at the bottom of narrow holes etched in the underlying isolation layer. During vertical regrowth, a single grain is filtered out which subsequently seeds the lateral growth of large grains. We will also discuss the performance of crystal-silicon TFTs that are formed in the location-controlled Si grains. The field-effect mobility for electrons is 450 cm2Vs, which is very close to that of TFTs made with silicon-on-insulator wafers.

Paper Details

Date Published: 30 April 2001
PDF: 10 pages
Proc. SPIE 4295, Flat Panel Display Technology and Display Metrology II, (30 April 2001); doi: 10.1117/12.424856
Show Author Affiliations
Ryoichi Ishihara, Delft Univ. of Technology (Netherlands)
Paul Ch. van der Wilt, Delft Univ. of Technology (Netherlands)
Barry D. van Dijk, Delft Univ. of Technology (Netherlands)
Artyom Burtsev, Philips Semiconductor (Netherlands)
F. C. Voogt, Delft Univ. of Technology (Netherlands)
G. J. Bertens, Delft Univ. of Technology (Netherlands)
J. W. Metselaar, Delft Univ. of Technology (Netherlands)
C. I. M. Beenakker, Delft Univ. of Technology (Netherlands)

Published in SPIE Proceedings Vol. 4295:
Flat Panel Display Technology and Display Metrology II
Edward F. Kelley; Edward F. Kelley; Apostolos T. Voutsas, Editor(s)

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