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Proceedings Paper

Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular beam epitaxy
Author(s): Takayuki Makino; Handong Sun; Tien Tuan Nguyen; Yusaburo Segawa; Chinhau Chia; Masashi Kawasaki; Akira Ohtomo; Kentaro Tamura; Hideomi Koinuma
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Paper Abstract

Excitonic properties of high-quality ZnO/Zno,88Mgo.120 multiple quantum wells grown by laser molecular-beam epitaxy were investigated by excitonic absorption spectra taken at temperatures of 5—300 K. Strength of excitonphonon coupling was deduced from temperature dependence of linewidth of the fundamental excitonic absorption band. Significant reduction of the exciton-phonon coupling with decreasing the well width was observed, which is consistent with the confinement-induced enhancement of the exciton binding energy. The thermal shift of the lowest excitonic energy is independent of well width, suggesting the negligible strain effect characteristically inherent in this material. Growth temperature dependence of third-harmonic generation efficiency in (BaxSri1-x)2CuO3 alloyed epilayers is reported. It was found that, within the temperature range adopted in this work, the harmonic generation efficiency of the epilayer grown at higher temperature is larger than that grown at low temperature.

Paper Details

Date Published: 23 April 2001
PDF: 9 pages
Proc. SPIE 4281, Combinatorial and Composition Spread Techniques in Materials and Device Development II, (23 April 2001); doi: 10.1117/12.424746
Show Author Affiliations
Takayuki Makino, RIKEN-The Institute of Physical and Chemical Research (Japan)
Handong Sun, RIKEN-The Institute of Physical and Chemical Research (Japan)
Tien Tuan Nguyen, RIKEN-The Institute of Physical and Chemical Research (Japan)
Yusaburo Segawa, RIKEN-The Institute of Physical and Chemical Research (Japan)
Chinhau Chia, Tohoku Univ. (Japan)
Masashi Kawasaki, Tokyo Institute of Technology (Japan)
Akira Ohtomo, Tokyo Institute of Technology (Japan)
Kentaro Tamura, Tokyo Institute of Technology (Japan)
Hideomi Koinuma, Tokyo Institute of Technology and Japan Science and Technology Corp. (Japan)


Published in SPIE Proceedings Vol. 4281:
Combinatorial and Composition Spread Techniques in Materials and Device Development II
Ghassan E. Jabbour; Hideomi Koinuma, Editor(s)

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