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Proceedings Paper

Femtosecond spectroscopy in ZnO with tunable UV pulses
Author(s): Hong Ye; Philippe M. Fauchet; S. Mathukumar; Yicheng Lu
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Paper Abstract

The hot carrier relaxation dynamics are studied in both intrinsic and n-type ZnO films grown on R-plane sapphire by metalorganic chemical vapor deposition. An ultrafast UV pump/UV probe experiment was used to study the relaxation process. Absorption saturation and band-gap renormalization are observed. A novel femtosecond pump-probe technique is also used in which the electrons present in n-type ZnO are excited by an infrared pump and the electron dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed. The results from those two samples are discussed.

Paper Details

Date Published: 23 April 2001
PDF: 9 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424726
Show Author Affiliations
Hong Ye, Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)
S. Mathukumar, Rutgers Univ. (United States)
Yicheng Lu, Rutgers Univ. (United States)

Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

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