Share Email Print

Proceedings Paper

Femtosecond carrier dynamics in GaN
Author(s): Chi-Kuang Sun; Jian-Chin Liang; Yong-Liang Huang; Yin-Chieh Huang; Xiang-Yang Yu; Stacia Keller; Steven P. DenBaars
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Ultrafast carrier dynamics in an unintentionally doped GaN sample was investigated using femtosecond transient transmission measurements. Special attention was focused on bandtail states. The transient responses suggest that the shallow bandtail states are extended states and deep bandtail states are localized states. The carriers in shallow bandtail states are found to externally thermalize within 500 fs, at the same rate as the above bandgap carriers. The carriers in deep bandtail states are, on the other hand, dominated by carrier transfer into the lower energy states through phonon assisted tunneling.

Paper Details

Date Published: 23 April 2001
PDF: 8 pages
Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); doi: 10.1117/12.424722
Show Author Affiliations
Chi-Kuang Sun, National Taiwan Univ. (Taiwan)
Jian-Chin Liang, National Taiwan Univ. (Taiwan)
Yong-Liang Huang, National Taiwan Univ. (Taiwan)
Yin-Chieh Huang, National Taiwan Univ. (Taiwan)
Xiang-Yang Yu, National Taiwan Univ. (Taiwan)
Stacia Keller, Univ. of California/Santa Barbara (United States)
Steven P. DenBaars, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 4280:
Ultrafast Phenomena in Semiconductors V
Hongxing Jiang; Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?