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Proceedings Paper

Method of powder metallurgy for compounds A11BV1
Author(s): Alexander I. Polyakov
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Paper Abstract

The method of powder metallurgy for CdTe gives high possibilities for production of new type material structure and detector with picosecond time resolution, high radiation resistivity and electrical breakdown voltage. The method is simple, can be used for different semiconductors. The method forms a semiconductor structure with partly normalized destroyed grain boundary between powder particles which is characterized by extremely high concentration of deep level and traps. The heating and fast freezing are the main operation of this technological process. This method changes electro physical properties of monocrystalline CdTe and gives the new perspectives for development of semiconductor physics and technology.

Paper Details

Date Published: 18 December 2000
PDF: 3 pages
Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); doi: 10.1117/12.422168
Show Author Affiliations
Alexander I. Polyakov, Research Institute of Pulse Techniques (Russia)

Published in SPIE Proceedings Vol. 4111:
Terahertz and Gigahertz Electronics and Photonics II
R. Jennifer Hwu; Ke Wu, Editor(s)

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