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Proceedings Paper

SiGe/Si quantum well resonant-cavity-enhanced photodetector
Author(s): Cheng Li; Qingqing Yang; Hongjie Wang; Jialian Zhu; Liping Luo; Jinzhong Yu; Qiming Wang
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Paper Abstract

Resonant-cavity-enhanced photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report a novel SiGe/Si multiple quantum-well resonance-cavity-enhanced photodetector fabricated on a separation-by-implanted-oxygen wafer operating near 1300nm. The buried oxide layer in SIMOX is used as a bottom mirror to form a vertical cavity with silicon dioxide/silicon Bragg reflector deposited on the top surface. The quantum efficiency at the wavelength of 1300nm is measured with 3.5 percent at a reverse bias of 15V, which is enhanced by 10 folds compared with a conventional photodetector with the same absorption structures.

Paper Details

Date Published: 18 December 2000
PDF: 6 pages
Proc. SPIE 4111, Terahertz and Gigahertz Electronics and Photonics II, (18 December 2000); doi: 10.1117/12.422129
Show Author Affiliations
Cheng Li, Institute of Semiconductors (China)
Qingqing Yang, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Jialian Zhu, Institute of Semiconductors (China)
Liping Luo, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 4111:
Terahertz and Gigahertz Electronics and Photonics II
R. Jennifer Hwu; Ke Wu, Editor(s)

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