Share Email Print
cover

Proceedings Paper

Light emission from silicon quantum dots
Author(s): Howard W. H. Lee; Peter A. Thielen; Gildardo R. Delgado; Susan M. Kauzlarich; Chung-Sung Yang; Boyd R. Taylor
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Inducing efficient visible light emission from silicon (Si) and understanding the underlying physics have long defined fascinating scientific and technological challenges. We present a comprehensive study on the origin and nature of red to ultraviolet (UV) light emission from Si quantum dots (QDs). We report the strongest quantum confinement (QC) effects to date and find that: (i) light emission can be stable in ambient and continuously tunable from the red to the UV through a single mechanism, i.e., QC, (ii) the energy gap increases from QC with decreasing size (Eg(d)- 1.14 ∝1/41.4) to energies significantly greater than previously observed (3.80 eV), (iii) the lowest optical transition remains predominantly indirect despite strong QC in small QDs (~14 Å diameter), and (iv) these properties can apply to QDs with and without a surface oxide layer. These results agree well with calculations that go beyond effective mass approximations. Visible light emission can also result from localized traps and may be mistaken for quantum confined emission.

Paper Details

Date Published: 23 June 2000
PDF: 18 pages
Proc. SPIE 10299, Novel Materials and Crystal Growth Techniques for Nonlinear Optical Devices: A Critical Review, 1029908 (23 June 2000); doi: 10.1117/12.419800
Show Author Affiliations
Howard W. H. Lee, Lawrence Livermore National Lab. (United States)
Peter A. Thielen, Univ. of California/Davis (United States)
Gildardo R. Delgado, Lawrence Livermore National Lab. (United States)
Susan M. Kauzlarich, Univ. of California/Davis (United States)
Chung-Sung Yang, Univ. of California/Davis (United States)
Boyd R. Taylor, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 10299:
Novel Materials and Crystal Growth Techniques for Nonlinear Optical Devices: A Critical Review
Ravindra B. Lal, Editor(s)

© SPIE. Terms of Use
Back to Top
PREMIUM CONTENT
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?
close_icon_gray