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Proceedings Paper

Synthesis of dispersion-controlled mirror based on the semiconductor materials for near-IR femtosecond lasers
Author(s): N. D. Goldina; Efim V. Pestryakov; V. I. Trunov
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Paper Abstract

It has been proposed the design of mirrors for near IR femtosecond lasers with given pulse characteristics based on the III-V compound semiconductors using MBE-technologies with reproducible phase parameter due to precise control of the layer parameters. The designed structure of two-part multilayer mirror includes the bottom part with a great number of AlGaAs-pairs and the top several antireflection layers. The specified negative near-constant group delay dispersion can be realized at certain band of spectrum.

Paper Details

Date Published: 12 March 2001
PDF: 4 pages
Proc. SPIE 4352, Laser Optics 2000: Ultrafast Optics and Superstrong Laser Fields, (12 March 2001); doi: 10.1117/12.418809
Show Author Affiliations
N. D. Goldina, Institute of Laser Physics (Russia)
Efim V. Pestryakov, Institute of Laser Physics (Russia)
V. I. Trunov, Institute of Laser Physics (Russia)

Published in SPIE Proceedings Vol. 4352:
Laser Optics 2000: Ultrafast Optics and Superstrong Laser Fields
Alexander A. Andreev; Vladimir E. Yashin, Editor(s)

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