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Proceedings Paper

Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe
Author(s): Aleksander V. Voitsekhovskii; Sergey N. Nesmelov; N. A. Koulchitskii
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Paper Abstract

The abnormal photoelectric properties of MIS structures, such as a significant photo-emf signal in the state of enhancement and a drop of the local photo-emf in inversion, were investigated with integrated and local photoelectric measurements. It has been established that the reason for the significant photo-emf signal in enhancement and the related features of the photoelectric properties of the structure is the photosensitivity in the region away from the electrode associated with a nonuniform distribution of electrically active defects. It has been demonstrated that the nonuniformity in surface potential (between the subelectrode region and the region away from the electrode (after-electrode region) or between different points in subelectrode region) may result in a drop of the local photo-emf in inversion. A conclusion has been made that the redistribution of nonequilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of actual MIS structures.

Paper Details

Date Published: 22 February 2001
PDF: 8 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417795
Show Author Affiliations
Aleksander V. Voitsekhovskii, Tomsk State Univ. and Siberian Physico-Technical Institute (Russia)
Sergey N. Nesmelov, Tomsk State Univ. and Siberian Physico-Technical Insitute (Russia)
N. A. Koulchitskii, Tomsk State Univ. and Siberian Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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