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Proceedings Paper

CdTe substrate purification from impurities by gettering
Author(s): Leonid A. Kosyachenko; Z. I. Zakharuk; A. I. Rarenko; E. S. Nykonyuk
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Paper Abstract

A possibility of CdTe substrate purification from impurities by structure-breakdown layer gettering, formed by laser irradiation, is considered. For profile calculation of diffusive distribution of point defects during heat treatment, and also substrate purification degree after heat treatment, a model, based on diffusion equation with consideration of impurity absorption by dislocations, is proposed. Impurity redistribution task in structure CdTe-CdHgTe during annealing is solved also. Investigations, carried out on specially prepared samples, confirmed CdTe purification effectiveness by gettering: impurity concentration decreased in 5 - 10 times.

Paper Details

Date Published: 22 February 2001
PDF: 4 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417793
Show Author Affiliations
Leonid A. Kosyachenko, Chernivtsi State Univ. (Ukraine)
Z. I. Zakharuk, Chernivtsi State Univ. (Ukraine)
A. I. Rarenko, Chernivtsi State Univ. (Ukraine)
E. S. Nykonyuk, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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