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Proceedings Paper

Temperature dependencies of electrical resistivity and thermoelectric power of SnTe thin films
Author(s): Elena I. Rogacheva; Olga N. Nashchekina; Irina A. Korzh; Lidiya G. Voinova; Igor M. Krivulkin
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Paper Abstract

The temperature dependences of electrical resistivity (rho) and thermoelectric power S for the SnTe polycrystalline thin films with charge carrier concentration of (3 - 5)(DOT)1021 cm-3 have been obtained in the range of 80 - 300 K. It was established that the (rho) (T) and S (T) dependences had non-monotonous character. In the temperature range of (80 - 150) K series of peculiarities in the form of steps and plateaux were observed most distinctly. Assumptions about the nature of these anomalies were made. The possible reasons for appearance of numerous temperature peculiarities are system's passing through different quantum states; the processes of self-organization taking place in an open system (heated thin film) at definite levels of excitation (certain temperatures); microdomain structure of thin films; relaxation processes. The pronounced anomalies observed in the temperature ranges of 135 - 150 and 190 - 200 K were attributed to phase transitions caused by redistribution of non-stoichiometric defects.

Paper Details

Date Published: 22 February 2001
PDF: 6 pages
Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); doi: 10.1117/12.417781
Show Author Affiliations
Elena I. Rogacheva, Kharkov State Polytechnic Univ. (Ukraine)
Olga N. Nashchekina, Kharkov State Polytechnic Univ. (Ukraine)
Irina A. Korzh, Kharkov State Polytechnic Univ. (Ukraine)
Lidiya G. Voinova, Kharkov State Polytechnic Univ. (Ukraine)
Igor M. Krivulkin, Kharkov State Polytechnic Univ. (Ukraine)

Published in SPIE Proceedings Vol. 4355:
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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