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Proceedings Paper

Spin-polarized electron transport and emission from strained superlattices
Author(s): Yuri A. Mamaev; Arsen V. Subashiev; Yuri P. Yashin; Anton N. Ambrajei; Alexander V. Roschansky
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Paper Abstract

We report the results on polarized electron emission from a new strained wide-gap AlxInyGa1-x-yAs/AlzGa1- zAs SL with tunable position of polarization maximum. These SL's were optimized to have a minimal conduction-band offset which comes from the band line-up between the semiconductor layers of the SL. The In layer content was chosen to give minimal conduction-band offset with large strain splitting of the V-band. Simultaneous changing of Al content in both SL layers provides variation of the structure band gap. We demonstrate that tuning of the SL to the excitation energy can be achieved without loss of the electron polarization. The polarization of up to 84% was measured at room temperature.

Paper Details

Date Published: 1 February 2001
PDF: 4 pages
Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001);
Show Author Affiliations
Yuri A. Mamaev, St. Petersburg State Technical Univ. (Russia)
Arsen V. Subashiev, St. Petersburg State Technical Univ. (Russia)
Yuri P. Yashin, St. Petersburg State Technical Univ. (Russia)
Anton N. Ambrajei, St. Petersburg State Technical Univ. (Russia)
Alexander V. Roschansky, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 4348:
Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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