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Proceedings Paper

Optical properties of epitaxial Sn-doped indium oxide films
Author(s): B. Vengalis; R. Butkute; V. Lisauskas; A. Kindurys
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Paper Abstract

Thin films of tin-doped indium oxide, In2O3:Sn (ITO), with 9 mol% Sn were grown heteroepitaxially at 600 degree(s)C by dc magnetron sputtering on (100)-faces of lattice-matched yttrium stabilized zirconia, ZrO2:Y (YSZ). Carrier density ranging from about 1026cm-3 to 1027m-3 has been measured after film annealing at 200divided by750 degree(s)C in oxygen or vacuum. The lowest resistivity valued down to about 4.0(DOT)10-6 (Omega) m (at 300 K) have been indicated for the vacuum-annealed films. Optical transmittance and reflectance spectra of the films were investigated at T = 85divided by300 K in the UV, visible and near IR spectra regions ((lambda) = 0.2divided by6.0 micrometers ). The transmittance spectra in the vicinity of the band-gap were modeled in terms of direct allowed transitions taking in to account both the gap widening (the Burstein-Moss effect) and narrowing due to electron-electron and electron-ion interaction. The band- gap Eg0, of 3.47 eV and 3.54 eV has been evaluated for non-doped material at T = 300 K and 85 K, respectively.

Paper Details

Date Published: 8 March 2001
PDF: 6 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417612
Show Author Affiliations
B. Vengalis, Semiconductor Physics Institute (Lithuania)
R. Butkute, Semiconductor Physics Institute (Lithuania)
V. Lisauskas, Semiconductor Physics Institute (Lithuania)
A. Kindurys, Semiconductor Physics Institute (Lithuania)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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