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Proceedings Paper

Fast electro-optical switching of single-barrier tunneling LEDs
Author(s): I. Romandic; N. Zurauskiene; F. Van Bragt; Etienne Goovaerts; Chris A. Van Hoof; Gustaaf Borghs
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Paper Abstract

We have studied the optical response of two single-barrier AlAs/GaAs tuneling-based light-emitting diodes (TLED's) excited by very fast electrical pulses (transition times of less than 100 ps). The grown TLED's were identical except for the barrier width, which was chosen to be 4 and 6 nm, respectively. Streak-camera time-resolved spectra were recorded at room and liquid-nitrogen temperature, while simultaneously monitoring the current and voltage pulses. Both diodes show very fast switch-on and switch-off, with the room temperature 3-dB modulation bandwidth of 3 GHz for the 6 nm sample and 1.8 GHz for the 4 nm TLED.

Paper Details

Date Published: 8 March 2001
PDF: 6 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417610
Show Author Affiliations
I. Romandic, Univ. of Antwerp (Belgium)
N. Zurauskiene, Univ. of Antwerp and Semiconductor Physics Institute (Belgium)
F. Van Bragt, Univ. of Antwerp (Belgium)
Etienne Goovaerts, Univ. of Antwerp (Belgium)
Chris A. Van Hoof, IMEC (Belgium)
Gustaaf Borghs, IMEC (Belgium)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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