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Proceedings Paper

Picosecond measurement of trap population dynamics in GaAs:As
Author(s): Linas Giniunas; R. Danielius; R. Adomavicius; Arunas Krotkus
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Paper Abstract

The ultrafast dynamics of As-ion implanted and annealed GaAs is investigated using transmission pump-probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures the transmitted optical signal is dominated by induced absorption, at higher annealing temperatures this effect is replaced by induced transparency. We explain these features by the saturation of the arsenic antisite related electron traps and by the appearance of the second type of defects, respectively.

Paper Details

Date Published: 8 March 2001
PDF: 5 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001);
Show Author Affiliations
Linas Giniunas, Vilnius Univ. (Lithuania)
R. Danielius, Vilnius Univ. (Lithuania)
R. Adomavicius, Semiconductor Physics Institute (Lithuania)
Arunas Krotkus, Semiconductor Physics Institute (Lithuania)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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