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Proceedings Paper

Asymmetric short-period GaAs/AlAs superlattices for light-emitting devices
Author(s): Vladimir G. Litovchenko; Dmytro V. Korbutyak; Sergiy G. Krylyuk; A. I. Bercha; Gintautas Tamulaitis; Arturas Zukauskas
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Paper Abstract

Photoluminescence properties of short-period asymmetric GaAs/AlAs superlattices with the well and barrier thickness varied from 10 to 3 monolayers were studied at high optical excitation. It was shown that an asymmetric structure of the superlattice, in which the well layers are at least twice wider than the barrier ones, allows us to maintain the direct band gap and, hence, to improve emission properties for any well width. This is important for utilization of such structures in light-emitting devices. The stimulated emission at 80 K was observed for a GaAs/AsAs superlattice with the well and barrier thickness of 6 and 3 monolayers, respectively. At the same time, investigations of the dependences of the emission intensity on the pump intensity for different superlattices revealed an enhancement of nonradiative recombination with decreasing the well thickness due to an enhanced influence of interface roughness.

Paper Details

Date Published: 8 March 2001
PDF: 6 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417607
Show Author Affiliations
Vladimir G. Litovchenko, Institute of Semiconductor Physics (Ukraine)
Dmytro V. Korbutyak, Institute of Semiconductor Physics (Ukraine)
Sergiy G. Krylyuk, Institute of Semiconductor Physics (Ukraine)
A. I. Bercha, Institute of Semiconductor Physics (Ukraine)
Gintautas Tamulaitis, Vilnius Univ. (Lithuania)
Arturas Zukauskas, Vilnius Univ. (United States)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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