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Proceedings Paper

Photocurrent amplification in Schottky diodes
Author(s): Larisa P. Amosova; Vladimir L. Komolov
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Paper Abstract

It is shown that the photocurrent amplification in Schottky diodes (SD) with low barriers is due to the avalanche of minority carriers in the depletion layer (DL) of a semiconductor. The simple physical model of carrier generation in the DL of the diode is proposed for the experimental results interpretation. The theoretical estimates of the current amplification coefficient are in a good agreement with experimental data.

Paper Details

Date Published: 8 March 2001
PDF: 6 pages
Proc. SPIE 4318, Smart Optical Inorganic Structures and Devices, (8 March 2001); doi: 10.1117/12.417605
Show Author Affiliations
Larisa P. Amosova, S.I. Vavilov State Optical Institute (Russia)
Vladimir L. Komolov, S.I. Vavilov State Optical Institute (Russia)

Published in SPIE Proceedings Vol. 4318:
Smart Optical Inorganic Structures and Devices
Steponas P. Asmontas; Jonas Gradauskas, Editor(s)

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