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Proceedings Paper

Hybrid silicon-organic light-emitting diodes for 1.5-um optoelectronics
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Paper Abstract

Electroluminescent diodes fabricated on silicon substrates which emit at a wavelength of 1.5 micrometer have been demonstrated. The diodes operate at room temperature and exhibit good I-V characteristics. The diodes use an erbium tris(8-hydroxyquinoline) (ErQ) layer as electron transporting and emitting layer and use N, N'-diphenyl-N, N'-bis(3-methyl)-1,1'-biphenyl-4,4'-diamine (TPD) as the hole transporting layer. Hole injection into the diodes is from a p++ silicon substrate anode and aluminum is used as the cathode electrode. The devices demonstrated start to exhibit electroluminescence at a voltage of approximately 17 V and the electroluminescence intensity rises sub-linearly with the current density through the device. At a drive voltage of 33 V the diodes have an internal efficiency of approximately 0.01%. We have measured the luminescence lifetime for the 1.5 micrometer emission and obtained a value of approximately 200 microsecond(s) . Using this value and estimating the total concentration of erbium present in the diodes we calculate a theoretical maximum optical power generation in these diodes of approximately 100 mW.

Paper Details

Date Published: 2 February 2001
PDF: 7 pages
Proc. SPIE 4105, Organic Light-Emitting Materials and Devices IV, (2 February 2001); doi: 10.1117/12.416903
Show Author Affiliations
Richard J. Curry, Univ. of London (United Kingdom)
William P. Gillin, Univ. of London (United Kingdom)
M. Somerton, Univ. of London (United Kingdom)
Andrew P. Knights, Univ. of Surrey (United Kingdom)
Russell M. Gwilliam, Univ. of Surrey (United Kingdom)

Published in SPIE Proceedings Vol. 4105:
Organic Light-Emitting Materials and Devices IV
Zakya H. Kafafi, Editor(s)

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