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Proceedings Paper

Time-resolved temperature and reflectivity measurements of nanosecond laser-induced melting and crystallization of silicon
Author(s): Gennadii D. Ivlev; Elena I. Gatskevich; Dmitrii N. Sharaev
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Paper Abstract

Crystal 4—< liquid phase transitions induced in monocrystalline silicon surface layers by pulsed irradiation of a ruby laser have been studied using in situ methods and also by numerical modeling the laser - induced thermal processes. Hydrodynamic phenomena and convective heat transfer from the liquid surface absorbing laser radiation to the melt-crystal interface are possible at the melting stage. During epitaxial crystallization, the undercooling of liquid Si at <1 1 1< crystal growth direction is '-15 K more than the same for <100< and <1 10< directions. Two kinetics regimes characterize the epitaxial process to various directions. This regimes differ not only in undercooling, but also in morphology of the liquidsolid interface which can be atomically smooth or rough.

Paper Details

Date Published: 30 January 2001
PDF: 4 pages
Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); doi: 10.1117/12.413776
Show Author Affiliations
Gennadii D. Ivlev, Institute of Electronics (Belarus)
Elena I. Gatskevich, Institute of Electronics (Belarus)
Dmitrii N. Sharaev, Institute of Electronics (Belarus)

Published in SPIE Proceedings Vol. 4157:
Laser-Assisted Microtechnology 2000
Vadim P. Veiko, Editor(s)

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