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Proceedings Paper

Laser synthesis of disilicides based on iron and their application for photothermal tensoconverters
Author(s): Sergey A. Mulenko; Michail M. Nishchenkko; Nikolai T. Gorbachuk
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Paper Abstract

In the present work iron discilicides were synthesized in tow phases: metal and semiconductor under the action of YAG:Nd+3-laser radiation on pure iron thin film to have been sputtered on Si substrate surface. Temperature dependencies of specific conductivity for samples with iron discilicides layers revealed the presence of semiconductor and metal phase in the formed alloy owing to the rapid solidification of the molten phases after finishing of laser pulse. There is decreasing of (sigma) equals (0.40 divided by 0.08)(Omega) -1 cm-1 while decreasing the sample temperature in the range (333 divided by 77)K. For all samples one can see decreasing of bandgap while increasing of laser power density. Electrical resistance as a function of relative mechanical deformation was measured on obtained samples. While changing of relative resistance in the range (0 divided by 1.6) X 10-2 meaning of (epsilon) was being changed in the range (0 divided by 1.6) X 10-4.

Paper Details

Date Published: 30 January 2001
PDF: 6 pages
Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); doi: 10.1117/12.413766
Show Author Affiliations
Sergey A. Mulenko, Institute for Metal Physics (Ukraine)
Michail M. Nishchenkko, Institute for Metal Physics (Ukraine)
Nikolai T. Gorbachuk, Kiev State Univ. of Technology and Design (Ukraine)

Published in SPIE Proceedings Vol. 4157:
Laser-Assisted Microtechnology 2000
Vadim P. Veiko, Editor(s)

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