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Proceedings Paper

Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japamn 2000 Best Presentation Award)
Author(s): Hideki Suda; Hideaki Mitsui; Osamu Nozawa; Hitoshi Ohtsuka; Megumi Takeuchi; Naoki Nishida; Yasushi Okubo; Masao Ushida
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Paper Abstract

The halftone phase-shift mask (HtPSM) has been in practical use for i-line and KrF lithography. In ArF lithography, the HtPSM is also considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We in HOYA have attempted to expand the applicability of our MoSi-based HtPSM blank technology to ArF lithography, helping extend the life of the existing infrastructure for conventional HtPSM fabrication. We have completed tuning our new MoSi-based film for ArF application. The film’s optical properties, chemical durability and ArF laser irradiation durability meet industry requirements; and it is compatible with conventional mask-making processes and repair techniques for the KrF HtPSM.

Paper Details

Date Published: 22 January 2001
PDF: 15 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410773
Show Author Affiliations
Hideki Suda, HOYA Corp. (Japan)
Hideaki Mitsui, HOYA Corp. (Japan)
Osamu Nozawa, HOYA Corp. (Japan)
Hitoshi Ohtsuka, HOYA Corp. (Japan)
Megumi Takeuchi, HOYA Corp. (Japan)
Naoki Nishida, HOYA Corp. (Japan)
Yasushi Okubo, HOYA Corp. (Japan)
Masao Ushida, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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