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Proceedings Paper

Development of a MoSi-based bilayer HT-PSM blank for ArF lithography
Author(s): Shuichiro Kanai; Susumu Kawada; Akihiko Isao; Takaei Sasaki; Kazuyuki Maetoko; Nobuyuki Yoshioka
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Paper Abstract

Attenuated PSM (Phase Shifting Mask) is needed at an early stage of ArF lithography. For HT (Half Tone)-PSM, some materials have been introduced in recent years. We also surveyed several materials for HT-PSM blank. We think MoSiON is the best material if it can be applied to ArF lithography. Because it could be processed with the same mask processors as KrF HT-PSM could be. However we did not get practical MoSiON film for ArF lithography with our conventional DC sputtering method. So we have developed a new sputtering method to get small k (extinction coefficient) with T6% blank at 193nm wavelength. The properties of the MoSiON films obtained by this method have been evaluated, such as optical properties, chemical durability, ArF laser irradiation durability and pattern profile for feasibility. These results indicate that ULCOAT T6% bi-layer MoSiON blank is feasible for 193nm lithography.

Paper Details

Date Published: 22 January 2001
PDF: 7 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410767
Show Author Affiliations
Shuichiro Kanai, ULVAC Coating Corp. (Japan)
Susumu Kawada, ULVAC Coating Corp. (Japan)
Akihiko Isao, ULVAC Coating Corp. (Japan)
Takaei Sasaki, ULVAC Coating Corp. (Japan)
Kazuyuki Maetoko, Mitsubishi Electric Corp. (Japan)
Nobuyuki Yoshioka, Mitsubishi Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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