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Proceedings Paper

Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correction
Author(s): Byung-Ho Nam; Dong-Seok Kim; Byung-Jin Cho; Nam-Ki Seok; Jae Kwan Jeong; Sang-Pye Kim; Sang-Woo Kang; Young Ju Hwang; Young Jin Song
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Paper Abstract

DUV scanner (4x) gate CD control was evaluated and compared with that of DUV stepper (5x) under the concept of total process proximity based correction (TPPC), merging all the process step error correction from mask fabrication to wafer etch process. We found that different iso-dense bias should be applied in the case of scanner. This is mainly caused by different optical proximity effect (DI-mask CD), that is, scanner shows nearly constant optical proximity effect regardless of the size of pattern CD while that of stepper is strongly dependent upon the size of pattern CD. Application of the concept of TPPC in DUV scanner enabled us to control FI CD within specification. A correction rule table was experimentally obtained using TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

Paper Details

Date Published: 22 January 2001
PDF: 8 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410760
Show Author Affiliations
Byung-Ho Nam, Hyundai Electronics Industries Co., Ltd. (South Korea)
Dong-Seok Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Byung-Jin Cho, Hyundai Electronics Industries Co., Ltd. (South Korea)
Nam-Ki Seok, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jae Kwan Jeong, Hyundai Electronics Industries Co., Ltd. (South Korea)
Sang-Pye Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Sang-Woo Kang, Hyundai Electronics Industries Co., Ltd. (South Korea)
Young Ju Hwang, Hyundai Electronics Industries Co., Ltd. (South Korea)
Young Jin Song, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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