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Proceedings Paper

Predictive model of the cost of extreme-ultraviolet lithography masks
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Paper Abstract

A model has been developed to predict the cost of extreme ultraviolet lithography (EUVL) masks. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor and is coated with reflective Mo/Si multilayers. Absorber layers are deposited on the multilayer and patterned. EUVL mask patterning will use evolutionary improvements in mask patterning and repair equipment. One of the challenges in implementing EUVL is to economically fabricate multilayer-coated mask blanks with no printable defects. The model of mask cost assigns yield and time required for each of the steps in fabricating EUVL masks from purchase of a polished substrate to shipment of a patterned mask. Data from present multilayer coating processes and present mask patterning processes are used to estimate the future cost of EUVL masks. Several of the parameters that significantly influence predicted mask cost are discussed in detail. Future cost reduction of mask blanks is expected from learning on substrate fabrication, improvements in low defect multilayer coating to consistently obtain <0.005 defects cm-2, and demonstration of multilayer smoothing which reduces the printability of substrate defects. The model predicts that the price range for EUVL masks in production will be S30-40K, which is comparable to the price of complex phase shift masks needed to use optical lithography for 70 nm critical dimension patterning.

Paper Details

Date Published: 22 January 2001
PDF: 16 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410754
Show Author Affiliations
Scott Daniel Hector, Motorola (United States)
Patrick A. Kearney, Lawrence Livermore National Lab. (United States)
Claude Montcalm, Lawrence Livermore National Lab. (United States)
James A. Folta, Lawrence Livermore National Lab. (United States)
Christopher C. Walton, Lawrence Livermore National Lab. (United States)
William M. Tong, Lawrence Livermore National Lab. (United States)
John S. Taylor, Lawrence Livermore National Lab. (United States)
Pei-yang Yan, Intel Corp. (United States)
Charles W. Gwyn, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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