Electron-beam projection lithography is a prime candidate for producing sub-100 nm linewidths. Critical to its success is the development of a low-distortion membrane mask. Membrane distortions are a result of fabrication and exposure and manifest themselves as pattern placement errors; thus, the sources of distortion must be identified, controlled, and minimized. Mechanical modeling via finite element (FE) methods provides an invaluable tool for accomplishing this task. Consequently, the FE method was used in conjunction with a series of designed experiments to efficiently identify and control the most influential parameters involved in the development of the Scattering with Angular Limitation Projection Electron-beam Lithography (SCALPEL) mask.

Date Published: 22 January 2001
PDF: 10 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410749

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)