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Proceedings Paper

Phase phirst! An improved strong-PSM paradigm
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Paper Abstract

The remaining difficulties in applying dual exposure dark-field strong-PSM technology can be overcome using the Sidewall Chrome Alternating Aperture (SCAA) mask structure, first proposed in 1992 and now fabricated. With all silica sidewalls covered and all chrome supported, the SCAA mask is largely immune to the phase and amplitude anomalies that cause spacewidth alternation as well as the design, fabrication and cleaning difficulties that plague other structures. Maxwell's equation solvers predict that the optical phase will be essentially independent of aperture size. Chips designed with their fmest features on a pre-defined regular grid can employ generic SCAA mask substrates in which the topography has been pre-patterned using wafer fab techniques. Guaranteed defect-free SCAA mask substrates will be manufactured in large quantity and low cost if the design grids become standardized. Fabricating strong-PSMs using these Phase Phirst mask substrates will prove no more difficult for mask-makers than COG masks, and the reduced MEEF will permit loosened CD specifications, among other advantages. The Phase Phirst Paradigm promises to reduce optical lithography costs —even for ASIC manufactures — and to delay the need for NGL technologies.

Paper Details

Date Published: 22 January 2001
PDF: 10 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410716
Show Author Affiliations
David Levenson, M.D. Levenson Consulting (United States)
John S. Petersen, Petersen Advanced Lithography, Inc. (United States)
David J. Gerold, Petersen Advanced Lithography, Inc. (United States)
Chris A. Mack, FINLE Division of KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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