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Proceedings Paper

Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP source
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Paper Abstract

As on-glass line widths shrink and exposure wavelengths approach the physical limitations of optical lithographic printing, the adoption of newer technology such as Off-Axis Illumination and Phase Shift Photomask technologies will substantially expand the operating life of DUV lithographic tools. In this article, the dry etch processes and Inductively Coupled Plasma (ICP) hardware iterations associated with the etch optimization of Levenson-style hard shifters are explored. These Alternating Aperture Hard Shifters currently adopt a single material form, with Levenson-style photomasks making use of a precise removal of quartz material between the Cr lines of a standard Photomask, improving the resolution of the exposed features. This precise quartz removal is performed utilizing dry etch technologies, with the use of high density, de-coupled plasmas such as ICP preferred. We explore Inductively Coupled Plasma shaping techniques along with newer etch processes for these materials, offering a Next Generation ICP Source design. Process conditions are verified and on-mask results are reported.

Paper Details

Date Published: 22 January 2001
PDF: 9 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410708
Show Author Affiliations
Russell J. Westerman, Unaxis USA, Inc. (United States)
Chris Constantine, Unaxis USA, Inc. (United States)
Jason Plumhoff, Unaxis USA, Inc. (United States)
C. Strawn, Unaxis USA, Inc. (United States)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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