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Proceedings Paper

Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography
Author(s): Toshihiro Ii; Tadashi Saga; Yusuke Hattori; Takashi Ohshima; Masao Otaki; Masahide Iwakata; Takashi Haraguchi; Koichiro Kanayama; Tsukasa Yamazaki; Nobuhiko Fukuhara; Tadashi Matsuo
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Paper Abstract

Attenuated phase shifting mask (att-PSM) is one of the key technologies for 130 nm and below device fabrication. We have proposed zirconium silicon oxide (ZrSiO) as a suitable material for next-generation att-PSM material. Through our optimization process both for film deposition and dry etching condition, we confirmed that we could control its phase shift and transmittance precisely. Because of its low film stress, we could neglect registration degradation. From its excellent spectral property, we can apply currently available defect inspection systems. Defect repair is easily performed by gas assisted etching. Further, we were successful to make high-transmittance material (16 %) at ArF laser source even keeping inspectability.

Paper Details

Date Published: 22 January 2001
PDF: 12 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410706
Show Author Affiliations
Toshihiro Ii, Toppan Printing Co., Ltd. (Japan)
Tadashi Saga, Toppan Printing Co., Ltd. (Japan)
Yusuke Hattori, Toppan Printing Co., Ltd. (Japan)
Takashi Ohshima, Toppan Printing Co., Ltd. (Japan)
Masao Otaki, Toppan Printing Co., Ltd. (Japan)
Masahide Iwakata, Toppan Printing Co., Ltd. (Japan)
Takashi Haraguchi, Toppan Printing Co., Ltd. (Japan)
Koichiro Kanayama, Toppan Printing Co., Ltd. (Japan)
Tsukasa Yamazaki, Toppan Printing Co., Ltd. (Japan)
Nobuhiko Fukuhara, Toppan Printing Co., Ltd. (Japan)
Tadashi Matsuo, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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