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Proceedings Paper

Materials for an attenuated phase-shifting mask in 157-nm lithography
Author(s): Takahiro Matsuo; Toshio Onodera; Toshiro Itani; Hiroaki Morimoto; Takashi Haraguchi; Koichiro Kanayama; Tadashi Matsuo; Masao Otaki
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Paper Abstract

We have investigated new materials for 157nm attenuated phase-shifting mask (Att-PSM). The structure of the Att-PSM is based on the bi-layer film in which a transparent film (TF) is deposited on an absorptive film (AF) on quartz substrate. We evaluated the optical property and the durability against F2 laser irradiation for 157nm Att-PSM materials, for which we prepared the modified ZrSixOy films and SiOx film as a TF and the Cr film and the modified ZrSixOy films as an AF. For a TF, the SiOx and modified ZrSixOy films achieve high transparency and robust durability against F2 laser light. For an AF, the Cr film achieves robust irradiation durability. Furthermore, we investigated the feasibility of defect inspection in consideration of the various combinations of TF and AF. From the calculation of the transmittance at inspection wavelength (193nm and 248nm), it is expected that the defect inspection is feasible in the combination of the SiOx or ZrSixOy transparent films with any absorptive film.

Paper Details

Date Published: 22 January 2001
PDF: 7 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410703
Show Author Affiliations
Takahiro Matsuo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshio Onodera, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takashi Haraguchi, Toppan Printing Co., Ltd. (Japan)
Koichiro Kanayama, Toppan Printing Co., Ltd. (Japan)
Tadashi Matsuo, Toppan Printing Co., Ltd. (Japan)
Masao Otaki, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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