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Proceedings Paper

Mask manufacturing rule check: how to save money in your mask shop
Author(s): Martin C. Keck; Wolfram Ziegler; Roman Liebe; Torsten Franke; Gerd Ballhorn; Matthias Koefferlein; Joerg Thiele
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Paper Abstract

By approaching the physical resolution limits of optical lithography for a given wavelength, data complexity on certain layers of chip layouts increases, while feature sizes decrease. This becomes even more apparent when introducing optical enhancement techniques. At the same time, more and more complex procedures to fracture mask data out of a DRC clean chip-GDS2 require checks on mask data regarding integrity, as well as mask manufacturability and inspectability. To avoid expensive redesigns and large mask house cycle times it is important to find shortcomings before the data are submitted to the mask house. As an approach to the situation depicted, a (Mask) Manufacturing Rule Check (MRC) can be introduced. Aggressive Optical Proximity Correction (OPC) is a special challenge for mask making. Recently, special algorithms for mask inspection of OPC assist features have been implemented by equipment vendors. Structures smaller than two inspection pixels, like assist structures, can be successfully inspected with certain algorithms. The impact of those algorithms on mask pattern requirements and suitable MRC adoptions will be discussed in the present paper.

Paper Details

Date Published: 22 January 2001
PDF: 5 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410681
Show Author Affiliations
Martin C. Keck, Infineon Technologies AG (Germany)
Wolfram Ziegler, Infineon Technologies AG (Germany)
Roman Liebe, Infineon Technologies AG (Germany)
Torsten Franke, Infineon Technologies AG (Germany)
Gerd Ballhorn, Infineon Technologies AG (Germany)
Matthias Koefferlein, Infineon Technologies AG (Germany)
Joerg Thiele, Infineon Technologies AG (Germany)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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