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Proceedings Paper

Mask manufacturing contribution on 248-nm and 193-nm lithography performances
Author(s): Alexandra Barberet; Gilles L. Fanget; Jean-Charles Richoilley; Michel Tissier; Yves Quere
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Paper Abstract

In this study, we focus on mask manufacturing contribution on 248nm & 193nm lithography performances. The masks are manufactured at DPI using both E-beam/Laser writing technologies (e-beam/laser) and two etching processes (Wet/Dry). Masks are optimized for 150nm node at wafer scale, neither RET nor tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask processes being used.

Paper Details

Date Published: 22 January 2001
PDF: 9 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410677
Show Author Affiliations
Alexandra Barberet, DuPont Photomasks, Inc. (France)
Gilles L. Fanget, CEA-LETI (France)
Jean-Charles Richoilley, DuPont Photomasks, Inc. (France)
Michel Tissier, DuPont Photomasks, Inc. (France)
Yves Quere, CEA-LETI (France)

Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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