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Proceedings Paper

Defect printability modeling of smoothed substrate defects for EUV lithography
Author(s): Avijit K. Ray-Chaudhuri; Aaron Fisher; Eric M. Gullikson
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Paper Abstract

In Extreme Ultraviolet (EUV) lithography, sub-resolution reticle substrate defects which are overcoated during the multilayer coating process could introduce proximity phase errors. A strategy for mitigating this problem is to coat the substrate with a smoothing layer prior to ML deposition. A spherical defect will be reduced to a low aspect Gaussian bump. In order to understand the smoothing requirements necessary to render a defect non-critical, we have utilized a simplified 3-D lithographic modeling approach to study the effect of a Gaussian bump in proximity to both 70 nm 1:3 L/S and 35 nm 1:3 L/S printed with a 0.1 and 0.25 numerical aperture system, respectively. The results quantify that the smoothing approach can be successfully used to render a defect non-critical by two means: 1) reducing the defect volume or 2) by reducing the slope of the Gaussian bump.

Paper Details

Date Published: 22 January 2001
PDF: 6 pages
Proc. SPIE 4186, 20th Annual BACUS Symposium on Photomask Technology, (22 January 2001); doi: 10.1117/12.410676
Show Author Affiliations
Avijit K. Ray-Chaudhuri, Sandia National Labs. (United States)
Aaron Fisher, Sandia National Labs. (United States)
Eric M. Gullikson, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 4186:
20th Annual BACUS Symposium on Photomask Technology
Brian J. Grenon; Giang T. Dao, Editor(s)

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